TECHNICAL DESCRIPTION

The invention describes a new technique to obtain fast high power pulsed magnetron current using an adapted power supply with controlled preionization. This technique yields a high ionized fraction in the sputtered vapor deposition process. Thanks to the fast rise-time of the discharge current and its fast fall time the self sputtering transition can be controlled. The short pulse operation avoids arc formation. This technique is easy to use on classical magnetron systems.

The transport of sputtered particles towards the substrate is facilitated. Self sputtering regime can be easily achieved for particular metals.