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Si1-XGeX SUBSTRATE WITH CONTROLLED THERMAL EXPANSION COEFFICIENT |
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Principal Investigator:A. LEYCURAS
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TECHNICAL DESCRIPTION
The present invention describes a process of deposition of a SiC layer adapted to later deposition of a nitride element of group III. Another goal is the formation of a layer of a nitride element of group III on a substrate so that this layer has a good crystalline quality and no mechanical constraints. The invention uses a mono -crystalline substrate of Silicium-Germanium, Si1-xGex ;
the germanium proportion x can be between 5 to 90,5% to 20% for Silicium Carbide and between 10 to 90% for Nitride. The composition of the alloy can be chosen to match its thermal expansion to the one of epitaxial structure to be grown on it.
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