With the aim to improve the state-of-the-art performances of
vertical-cavity based devices, in order to enlarge their functionalities, and to further extend the capabilities in the AlGaAs material system, the remaining technological limitations for this kind of devices have to be overcome.

In this way, the non-uniformity of the carrier injection and the difficulty in precisely controlling the shape and the size of the active region from AlOx apertures (formed by lateral selective oxidation of an AlAs buried layer) is addressed.