The invention concerns novel organometallic complexes of platinum and their use for deposition of metal platinum.

Metallic platinum thin films present considerable interest for their wide range of applications including contacts in microelectronic devices, Schottky barrier diode, barrier layer for high temperature materials…also platinum dispersion can be used as electrode for fuel cells.

Among all metal deposition processes, the catalyzed organometallic chemical vapor (OMCVD) is a well-developed technology to fabricate thin films of compound semiconductors and to create thin metal films. OMCVD consists of vaporization of a precursor at low temperature, under reduced pressure and ensure high quality films, nonplanar surfaces coverage, high uniformity and short time manufacturing, whose characteristics are determined solely by the growth conditions.

However, OMCVD often encounters precursor volatility constraints, which leads to mass transport limited conditions and poor step coverage. Wide use precursors are: Pt(acac)₂, Pt(PF₃)₄,(cod)PtMe₂ ou MeCpPtMe₃.

Various studies show problems during decomposition of Pt(acac)2 due to a low volatility. (cod)PtMe2 is a good precursor but display medium volatility, non reproducible results and poor stability during long term storage. MeCpPtMe3, is air and humidity sensitive. EtCpPtMe3 shows a better stability but is also expensive