The diversification of the materials used in Si-based microelectronic technologies is the only way to overcome the intrinsic limitations of standard CMOS devices. In particular, finding solutions to integrate III-V based light emitters and detectors with Si-based CMOS circuits, or to integrate high mobility Ge or III-V channels would allow major improvement of the device performances. Defining a monolithic process is particularly relevant in terms of reliability and technological costs, and is required for full wafer technologies and solar cells applications.

The monolithic solution proposed here is original and liable to come off the definition of a process that fulfils the abovementioned requirements