The present invention concerns the superconducting application area, where only few and very specific devices exist. The lack of general purpose transistor for superconducting applications strongly reduces the development and the dissemination of these technologies. The present invention proposes a general purpose field effect transistor, suitable for low to high current applications.

This invention is specifically adapted for the high current applications since it benefits from all field effect transistors, in term of electrical insulation and switching times.