TECHNICAL DESCRIPTION

This invention describes a peripheral structure for a monolithic power device with smaller space requirements than components with a similar critical electric field and enabling the implantation of electric functions at the front and rear face.
The structure is compatible with planar technology and alloys good control of the electric field.
The invention also describe a peripheral structure that does not require any stop channels and that can be used with an MOS technology.
The peripheral structure also alloys symmetrical voltages and is thus supple enough to be a technological brick. This brick provides voltage symmetrisation of existing power components, such as power bipolar transistors, thyristors or IGBT components, but also design and development of new components or of new power electric functions.