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METHOD FOR PREPARING A GALLIUM NITRIDE COATING |
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Principal Investigator: F. SEMOND
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TECHNICAL DESCRIPTION
This invention describes a monocrystalline crack-free coating of gallium nitride or mixed gallium nitride and another metal, on a substrate that is likely to cause extensive stress in the coating. The substrate is coated with a buffer layer that has a monocrystalline layer with a thickness of 100 and 300 nm, preferably between 200 and 250 nm, and with a crystal lattice parameter that is less than the crystal lattice parameter of the gallium nitride or of the mixture which is inserted into the gallium nitride. This invention also describes the method to prepare this coating, and electronic and optoelectronic devices including this coating.
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