CONTEXT

Information storage and more specifically non-volatile memories represent strategic issues in the field of microelectronics. The huge non-volatile memory market is currently led by the Flash technology (Flash cards, Solid State Drives). However, the intrinsic drawbacks of this technology (long writing time, 5-10 μs, use of high voltages, 5-10 V and complex design) will limit its development in the near future.

Several alternatives, such as the Phase Change (PCRAM), Magnetic (MRAM) or Resistive (RERAM) Random Access Memories, are currently considered to overcome the main limitations of the Flash technology. In particular, RERAM’s, based on an Electric-Pulse-Induced Resistive Switching (EPIRS) effect, seem to be an appealing solution as they offer a better scalability, shorter writing times (10-100 ns) and a good endurance. Recently, non-volatile reversible EPIRS effects were uncovered on AM4X8 (A = Ga, Ge; M = V, Nb, Mo, Ta ; X = S, Se) single crystals at the Institut des Matériaux Jean Rouxel (IMN)1. In this chalcogenide compound, short low level electric pulses (100 ns, 500 V.cm-1) yield a non-volatile resistive switching between a high and a low resistance state. These results obtained on single crystals are very promising for RRAM applications; however, a large scale integration of such material in device memory requires prior thin film deposition.