The invention concerns the field of Micro-Opto-Electrical Microsystems (MOEMS).

The respective thickness and composition of three semiconductor layers and spacers are selected so that the structure has at least one optical transfer function adapted to light to be treated and adjustable in accordance with the selected potentials applied to the semiconductor layers. The semiconductor layers, having N-type or P-type doping which may differ or not from one layer to the next, are separated by spacers with non-intentional (I-type) or intentional (N-type or P-type) doping to define a PINIP or NIPIN structure with air cavities and are adapted to be set at selected respective electric potentials. The respective thickness and composition of the layers and the spacers are selected so that the structure has at least one optical transfer function adapted to light to be treated and adjustable in accordance with the selected potentials applied to the semiconductor layers.