|
Si1-XGeX SUBSTRATE WITH CONTROLLED THERMAL EXPANSION COEFFICIENT |
|
Principal Investigator:A. LEYCURAS
|
TECHNICAL DESCRIPTION
The present invention describes a process of deposition of a SiC layer adapted to later deposition of a nitride element of group III. Another goal is the formation of a layer of a nitride element of group III on a substrate so that this layer has a good crystalline quality and no mechanical constraints. The invention uses a mono -crystalline substrate of Silicium-Germanium, Si1-xGex ;
the germanium proportion x can be between 5 to 90,5% to 20% for Silicium Carbide and between 10 to 90% for Nitride. The composition of the alloy can be chosen to match its thermal expansion to the one of epitaxial structure to be grown on it.
To read more, please register or connect in the right pannel... |
