CONTEXT

The invention concerns a process for the deposition of copper on a support for integrated circuits. The use of copper for producing electrical contacts in integrated circuits is justified by its low electrical resistivity and its low electromigration.

Common processes to deposit thin layers on supports are PVD or CVD. For CVD, the deposition of copper layers employs mainly organometallic copper complexes. However, theses precursors show high CTO performances or/and poor yield. Moreover, heteroatoms present in the ligands are reencountered in the form of contaminants in the deposit copper films…

The purpose of M. Doppelt’ invention is to provide a Cu complex in which the coordinating group does not comprise a heteroatom which interferes with the deposition of the metal and which is soluble in a solvent which can be used in CVD