|
WHITE LIGHT-EMITTING DIODE WITH GaN |
|
Principal Investigator: N. GRANJEAN
|
TECHNICAL DESCRIPTION
This invention describes a single semiconductor GaInN layer that may contain a low percentage of arsenic, phosphorus, or antimony. This layer emits at least two visible lights of specific colours that result in a white light. The invention also describes a method for preparing the layer and a light-emitting diode (LED), in particular a LED emitting white light including an active zone such as a thin layer and an illumination device with diode.
To read more, please register or connect in the right pannel... |
