|
VERTICAL METAL-SEMICONDUCTOR MICRORESONATOR PHOTODETECTING DEVICE |
|
Principal Investigator: F . PARDO
|
TECHNICAL DESCRIPTION
This invention describes a photodetection device that offers a wide range of selection for wave length, it is extremely rapid and highly sensitive.
The device uses a vertical microresonator, which provides a quantum yield of over 70% in a low capacity structure, whose range between the electrodes may be less than 50 nm and may lead to a bandwidth of over 1 THz. The light is concentrated to detect in a resonant manner, in a low volume MSM type structure, by using the fast drop in evanescent modes excited in the Metal/Semiconductor interface. The surface plasmon modes make this possible. Unlike known structures, plasmons do not spread horizontally (that is to say parallel to the substratum of the structure), but remain confined along the vertical surface of the electrodes in the structure.
To read more, please register or connect in the right pannel... |
