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MOEMS DEVICE WITH ELECTRICALLY ADJUSTABLE TRANSFER FUNCTION |
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Principal Investigator: P. VIKTOROVITCH
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TECHNICAL DESCRIPTION
This invention describes an optoelectronic device with alternation of at least three semiconductor layers with selected shapes, and two air layers. The semiconductor layers with N-type or P-type doping which may or may not differ from one layer to the next are separated by spacers where the doping is unintentional (I-type) or intentional (N-type or P-type) to define a PINIP or NIPIN structure with air cavities, and are adapted to be set at selected respective electric potentials. The respective thicknesses and compositions of the layers and the spacers are selected so that the structure has at least an optical transfer function adapted to the light to be treated and adjustable in accordance with the selected potentials applied to the semiconductor layers.
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