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METHOD OF EPITAXIAL GROWTH ON A SUBSTRATE |
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Principal Investigator: A. LEYCURAS
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TECHNICAL DESCRIPTION
The present invention describes a process and a reactor to improve the crystalline quality of crystals obtained by growth from a liquid phase on a substrate. The invention describes a method for epitaxial growth of a 3C SiC layer on a Si substrate. In a second step, this layer is used as a mono -crystalline crucible which will be used also as a seed. The silicon is melted and carbon is introduced in the melt via a gaseous precursor which sweeps the Si melt. The reactor for the entire process allows control of the temperature gradient between the top surface of the liquid Si and its SiC interface. The play on this gradient is used to optimize the SiC growth on the SiC side of the Si-SiC interface until complete Si conversion into SiC is achieved.
The present invention produces SiC wafers without any microchannels, for example as 3C and 6H polytypes, of large diameters (up to 200 mm and more), at a temperature of ~1500° C. instead of 2300° C., in a reactor which is inexpensive. It can be applied to other binary semiconductors such as AlN.
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